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this is information on a product in full production. march 2013 docid022851 rev 3 1/22 22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 n-channel 650 v, 0.073 ? , 30 a mdmesh? v power mosfet in d 2 pak, to-220fp, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best r ds(on) * area ? higher v dss rating and high dv/dt capability ? excellent switching performance ? 100% avalanche tested applications ? switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. d 2 pak to-220 to-220fp to-247 1 2 3 1 2 3 tab 1 2 3 1 3 2 tab $0y '7$% * 6 order code v dss @ t jmax r ds(on) max i d stb38n65m5 710 v < 0.095 30 a stf38n65m5 stp38n65m5 STW38N65M5 table 1. device summary order code marking package packaging stb38n65m5 38n65m5 d 2 pak tape and reel stf38n65m5 to-220fp tube stp38n65m5 to-220 STW38N65M5 to-247 www.st.com
contents stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 2/22 docid022851 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid022851 rev 3 3/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak to-220 to-247 to-220fp v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 30 30 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 19 19 (1) a i dm (1) drain current (pulsed) 120 120 (1) a p tot total dissipation at t c = 25 c 190 35 w dv/dt (2) 2. i sd 30 a, di/dt 400 a/ s; v peak < v (br)dss, v dd = 400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pak to-220fp to-220 to-247 r thj-case thermal resistance junction- case max 0.66 3.6 0.66 c/w r thj-pcb thermal resistance junction- pcb max (1) 1. 1.when mounted on 1inch2 fr-4 board, 2 oz cu. 30 c/w r thj-amb thermal resistance junction- ambient max 62.5 50 c/w
electrical ratings stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 4/22 docid022851 rev 3 table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 8a e as single pulse avalanche energy (starting t j = 25c, i d = i ar ; v dd = 50v) 660 mj
docid022851 rev 3 5/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 electrical characteristics 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 15 a 0.073 0.095 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 3000 74 5.8 - pf pf pf c o(tr)(1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -244-pf c o(er)(2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -70-pf r g intrinsic gate resistance f = 1 mhz open drain - 2.4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 15 a, v gs = 10 v (see figure 20 ) - 71 18 30 - nc nc nc
electrical characteristics stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 6/22 docid022851 rev 3 table 7. switching times symbol parameter test conditions min. typ. max. unit t d (v) t r (v) t f (i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 20 a, r g = 4.7 , v gs = 10 v (see figure 21 and figure 24 ) - 66 9 9 13 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 30 120 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 30 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30 a, di/dt = 100 a/ s v dd = 100 v (see figure 24 ) - 382 6.6 35 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30 a, di/dt = 100 a/ s v dd = 100 v, t j = 150 c (see figure 24 ) - 522 10.3 40 ns c a
docid022851 rev 3 7/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 electrical characteristics 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak and to-220 figure 3. thermal impedance for d2pak and to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse am12634v1 i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse 0.01 am12635v1 i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c sinlge pulse am12636v1
electrical characteristics stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 8/22 docid022851 rev 3 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on-resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 40 20 0 0 10 v ds (v) 20 (a) 5 15 25 60 80 v gs = 6 v v gs = 8 v v gs = 7 v v gs = 10 v am12637v1 i d 40 20 0 3 5 v gs (v) 7 (a) 4 6 8 60 80 v ds = 25v am12638v1 v gs 4 0 0 q g (nc) (v) 40 8 20 v dd =520v i d =15a 12 300 200 100 0 400 500 v ds v ds 60 80 (v) am12639v1 r ds(on) 0.070 0.068 0.066 0.064 0 10 i d (a) ( ) 5 15 0.072 0.074 0.076 0.088 v gs =10v 20 25 am12640v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am12641v1 e oss 6 4 2 0 0 100 v ds (v) (j) 400 8 200 300 10 12 500 600 14 am12642v1
docid022851 rev 3 9/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 electrical characteristics figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized v ds vs temperature figure 18. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode. i d = 250 a v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am05459v1 v gs = 10 v i d = 15 a r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 am05460v1 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1 e 300 200 100 0 0 20 r g ( ) ( j) 10 30 400 500 600 40 i d =20a v dd =400v l=50h eon eoff am12643v1
test circuits stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 10/22 docid022851 rev 3 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform $0y 9 *6 3 : 9 ' 5 * 5 / '87 ? ) ? ) 9 '' $0y 9 '' n ? n ? n ? n ? n ? 9 9 l 9 9 *0$; ? ) 3 : , * &2167 ? q) '87 9 * $0y $ ' '87 6 % * ? $ $ % % 5 * * )$67 ',2'( ' 6 / ? + ? ) ? ) 9 '' $0y 9 l 3 z 9 ' , ' '87 / ? ) ? ) 9 '' $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am05540v1 inductive load turn -off id vgs vds 90%vds 10%id 90%vgs on t d (v) t c (off) 10%vds 90%id vgs(i(t)) on t f (i) t r (v) ))
docid022851 rev 3 11/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 12/22 docid022851 rev 3 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid022851 rev 3 13/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 package mechanical data table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 14/22 docid022851 rev 3 figure 27. to-220fp drawing 7012510_rev_k_b
docid022851 rev 3 15/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 package mechanical data table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
package mechanical data stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 16/22 docid022851 rev 3 figure 28. to-220 type a drawing 0015988_typea_rev_s
docid022851 rev 3 17/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 package mechanical data table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 18/22 docid022851 rev 3 figure 29. to-247 drawing 0075325_g
docid022851 rev 3 19/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 packaging mechanical data 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3
packaging mechanical data stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 20/22 docid022851 rev 3 figure 30. tape figure 31. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid022851 rev 3 21/22 stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 revision history 6 revision history table 14. document revision history date revision changes 22-feb-2012 1 first release. 21-jun-2012 2 document status changed from preliminary data to production data. added section 2.1: electrical characteristics (curves) . 05-mar-2013 3 added dv/dt value on table 2: absolute maximum ratings .
stb38n65m5, stf38n65m5, stp38n65m5, STW38N65M5 22/22 docid022851 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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